BAW100

SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o ta l p o w e r d is s ip a tio n , T S = 3 1 J u n c tio n te m p e ra tu re S torage tem perature range J u n c tio n - a m b ie n t1) J u n c tio n - s o ld e rin g p o in t N ote 1.P ackage m ounted on epoxy pcb 40 m m Sym bol VR V RM IF IF S P to t Tj T stg R th JA R th JS V a lu e 75 85 200 4 .5 330 150 -65 to + 150 500 360 40 m m 1.5 m m /6 cm 2 C u U n it V V mA A mW K /W K /W www.kexin.com.cn 1 SMD Type BAW100 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol VBR Forward voltage VF Reverse current Diode capacitance Reverse recovery time IR Cd trr Conditions I(BR) = 100 A IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V VR = 25 V, TA = 150 VR = 75 V, TA = 150 VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Min Typ Max Unit 85 V 715 855 1000 mV 1250 1 30 A 50 2 pF 6 ns Marking Marking JSs 2 www.kexin.com.cn ...