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BAW101 Datasheet

Part Number BAW101
Manufacturers NXP
Logo NXP
Description High voltage double diode
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101 FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes. APPLICATIONS • High voltage switching • Automotive • Communication. PINNING PIN 1 2 3 4 DESCRIPTION cathode 1 cathode 2 anode 2 anode 1 handbook, halfpage4 3 43 DESC.

  BAW101   BAW101






Part Number BAW101
Manufacturers Kexin
Logo Kexin
Description Silicon Switching Diode Array
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS 35 Junction tem perature Storage tem perature range Junction - am bient1) Junction - soldering point N o te 1.Package m ounted on epoxy pcb 40 m m Sym bol VR VRM IF IFM IFS P tot Tj T.

  BAW101   BAW101







Part Number BAW101
Manufacturers LGE
Logo LGE
Description High Voltage Double Diode
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes. Pb Lead-free APPLICATIONS z General application. ORDERING INFORMATION Type No. Marking BAW101 AB SOT-143 Package Code SOT-143 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Repetitive Peak Reverse Voltage Series connection VRRM 300 600 Continuous Reverse Voltage Series connection VR 300 600 Continuou.

  BAW101   BAW101







Part Number BAW101
Manufacturers Siemens Group
Logo Siemens Group
Description Silicon Switching Diode
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and reel) Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS ≤ 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth .

  BAW101   BAW101







Part Number BAW101
Manufacturers Central Corp
Logo Central Corp
Description HIGH VOLTAGE SWITCHING DIODE
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

BAW101 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for applications requiring dual high voltage switching diodes. MARKING CODES: CJP or BAW101 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage .

  BAW101   BAW101







Part Number BAW101
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Silicon Switching Diode
Datasheet BAW101 DatasheetBAW101 Datasheet (PDF)

Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAW101... BAW101 " , ! ,  Type Package Configuration BAW101 SOT143 parallel Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Peak reverse voltage VRM Forward current IF Peak forward current IFM Peak forward current Surge forward current, t = 1 µs IFM IFS Non-repetitive pea.

  BAW101   BAW101







High voltage double diode

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101 FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes. APPLICATIONS • High voltage switching • Automotive • Communication. PINNING PIN 1 2 3 4 DESCRIPTION cathode 1 cathode 2 anode 2 anode 1 handbook, halfpage4 3 43 DESCRIPTION The BAW101 is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT143B plastic SMD package. MARKING TYPE NUMBER BAW101 MARKING CODE(1) ∗AB Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. 1 Top view 2 12 MAM059 Fig.1 Simplified outline (SOT143B) and symbol. 2003 May 13 2 NXP Semiconductors High voltage double diode Product data sheet BAW101 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. Per diode VR continuous reverse voltage VRRM repetitive peak reverse voltage IF continuous forward current IFRM IFSM Ptot Tstg Tj Tamb repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature series connection series connection single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see F.


2016-02-06 : ACMD-6207    ACMD-6025    ACMD-6103    ACMD-6125    ACMD-7407    ACMD-7410    ACMD-7606    ACPF-7141    BAW101    BAW62   


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