BAW56C

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23(1). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range VRM VR IF IFSM PD Tj Tstg 85 80 200 2 225* 150 -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW BAW56C SILICON EPITAXIAL PLANAR DIODE A G D E L BL 23 1 M 1. CATHODE 1 2. CATHODE 2 3. ANODE DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 3 21 SOT-23(1) C N K J Marking H6CType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Voltage Reverse Current Total Capacitance VR VF(1) VF(2) VF(3) IR CT TEST CONDITION IR=100uA IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz MIN. 80 - TYP. 0.6 0.72 - MAX. - 0.65 0.8 1.25 0.5 3 UNIT V V A pF 2015. 5. 12 Revision No : 0 1/2 FORWARD CURRENT I F (mA) BAW56C IF - VF 10 3 10 2 10 C C TaT=a-=2255 Ta=100 C 1 -1 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 2.5 2.0 1.5 1.0 0.5 0 0.2 CT - VR f=1MHz Ta=25 C 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (µA) I R - VR 10 Ta=100 C 1 Ta=75 C -1 10 Ta=50 C -2 Ta=25 C 10 10-3 0 20 40 60 80 REVERSE VOLTAGE VR (V) TOTAL CAPACITANCE ...