BB402M

BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd. Edition Dec. 1998 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX–”. 2. BB402M is individual type number of HITACHI BBFET. BB402M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 +10 ±10 — — 0.4 0.4 9 15 2.2 0.8 — 22 — Typ — — — — — 0.7 0.7 13 20 3.0 1.1 0.017 26 1.7 Max — — — +100 ±100 1.0 1.0 18 — 4.0 1.5 0.04 — 2.2 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 9V, VG2S = 6V, ID = 100µA VDS = 9V, VG1S = 9V, ID = 100µA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 120kΩ VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ, f = 1kHz VDS = 9V, VG1 = 9V VG2S =6V, RG = 120kΩ f = 1MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ,...