BB417

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB417 UHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode FEATURES Excellent linearity Hermetically sealed leaded glass SOD68 (DO-34) package C15: 3 pF; ratio: 3.5. APPLICATIONS Automatic frequency control VCO. DESCRIPTION The BB417 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 470 MHz; note 1 VR = 4 V; f = 1 MHz; see Figs 2 and 4 VR = 15 V; f = 1 MHz; see Figs 2 and 4 C d ( 4V ) -------------------C d ( 15V ) Note 1. VR is the value at which Cd = 9 pF. f = 1 MHz MIN. − − − 8 2.2 2 TYP. − − − − − − Cathode side indicated by a white band on a black body. k handbook, halfpage a BB417 MAM159 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +100 V mA °C °C UNIT MAX. 10 200 0.7...