BB439

BB 439 Silicon Variable Capacitance Diode Preliminary Data q q BB 439 For VHF tuned circuit applications High figure of merit Type BB 439 Marking white 2 Ordering Code (tape and reel) Q62702-B577 Pin Configuration Package1) SOD-323 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 28 30 20 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 439 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 28 V VR = 28 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V Capacitance ratio, f = 1 MHz VR = 3 V, 25 V Capacitance matching VR = 3 V … 25 V, f = 1 MHz Series resistance f = 100 MHz, CT = 12 pF Figure of merit f = 50 MHz, VR = 3 V f = 200 MHz, VR = 25 V Symbol min. IR – – CT 26 4.3 CT3 / CT25 ∆CT Values typ. – – – – – – 0.35 max. Unit nA 20 200 pF 32 6 6.5 3 0.5 – % Ω – 5 – – / CT rs Q – – 280 600 – – Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 ...