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BB501M Datasheet

Part Number BB501M
Manufacturers Hitachi
Logo Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet BB501M DatasheetBB501M Datasheet (PDF)

BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1..

  BB501M   BB501M






Part Number BB501C
Manufacturers Hitachi
Logo Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet BB501M DatasheetBB501C Datasheet (PDF)

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: .

  BB501M   BB501M







Part Number BB501
Manufacturers Hitachi
Logo Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet BB501M DatasheetBB501 Datasheet (PDF)

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: .

  BB501M   BB501M







Part Number BB501
Manufacturers Hitachi
Logo Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet BB501M DatasheetBB501 Datasheet (PDF)

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: .

  BB501M   BB501M







Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS–”. 2. BB501M is individual type number of HITACHI BBFET. BB501M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 0.5 7 19 Typ — — — — — 0.7 0.7 10 24 Max — — — +100 +100 1.0 1.0 13 29 Unit V V V nA nA V V mA mS Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = +10 µA VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100µA VDS = 5V, VG1S = 5V I D = 100µA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47kΩ VDS = 5V, VG1 = 5V VG2S =4V RG = 47kΩ, f = 1kHz VDS = 5V, VG1.


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