BB504C

BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 (Previous ADE-208-983D) Rev.6.00 Aug.10.2005 Features www.DataSheet4U.com Low Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “DS–”. 2. BB504C is individual type number of RENESAS BBFET. Rev.6.00 Aug 10, 2005 page 1 of 9 BB504C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain (1) ...