BB506M

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506M is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID PchNote3 Tch Tstg Ratings 6 +6 –0 +6 –0 30 300 150 –55 to +150 Unit V V V mA mW °C °C Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm). This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. REJ03G1604-0100 Page 1 of 8 Rev.1.00 Nov 26, 2007 BB506M Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current www.DataSheet4U.com Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance...