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BB639 Datasheet

Part Number BB639
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Silicon Variable Capacitance Diodes
Datasheet BB639 DatasheetBB639 Datasheet (PDF)

BB639/BB659... Silicon Variable Capacitance Diodes  For tuning of extended frequency band in VHF TV / VTR tuners  High capactance ratio  Low series inductance  Low series resistance  Excellent uniformity and matching due to "in-line" matching assembly procedure BB639 BB659 1 2 Type BB639 BB659 Package SOD323 SCD80 Configuration single single LS (nH) Marking 1.8 yellow S 0.6 DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse volta.

  BB639   BB639






Part Number BB639
Manufacturers Siemens Group
Logo Siemens Group
Description Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)
Datasheet BB639 DatasheetBB639 Datasheet (PDF)

Silicon Variable Capacitance Diode BB 639 q For tuning of extended frequency bands in VHF TV/VTR tuners Type Ordering Code (tape and reel) Q62702-B586 Pin Configuration 1 2 C A Marking Package BB 639 yellow S SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 – 55 … + 150 – 55 … + 150 Unit V V mA °C °C VR VRM IF Top Tstg RthJA ≤.

  BB639   BB639







Silicon Variable Capacitance Diodes

BB639/BB659... Silicon Variable Capacitance Diodes  For tuning of extended frequency band in VHF TV / VTR tuners  High capactance ratio  Low series inductance  Low series resistance  Excellent uniformity and matching due to "in-line" matching assembly procedure BB639 BB659 1 2 Type BB639 BB659 Package SOD323 SCD80 Configuration single single LS (nH) Marking 1.8 yellow S 0.6 DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage ( R  5k ) Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 30 35 20 -55 ... 150 -55 ... 150 V mA °C 1 Nov-07-2002 BB639/BB659... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 36 27.7 2.5 2.4 38.3 29.75 2.85 2.6 14.7 10.4 40 31.8 3.2 2.9 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 13.5 9.8 Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) BB639 CT/CT rS VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence 0.3 0.4 0.65 2.5 1 2 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequence BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence BB659 Series resistance VR = 5 V, f = 470 MHz 1For -  detai.


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