BB640

BB640... Silicon Variable Capacitance Diode
For Hyperband TV / VTR tuners, Bd l BB640 1 2 Type BB640 Package SOD323 Configuration single LS (nH) Marking 1.8 red S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R
5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB640... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 62 47.5 2.85 2.8 69 54.5 3.28 3.05 16.6 1.15 76 61.5 3.7 3.3 25 2.5 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 19.5 15 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz
CT/CT rS Series resistance CT = 12 pF, f = 100 MHz 1For  details please refer to Application Note 047. 2 Nov-07-2002 BB640... Diode capacitance CT =  (VR) f = 1MHz EHD07045 Temperature coefficient of the diode capacitance TCc =  (VR ) 10 -3 CT 100 pF 90 80 70 60 50 40 30 20 10 0 10 -1 0 1 1/°C TCc 10 -4 10 -5 0 10 10 10 V VR 10 2 10 1 V 10 2 VR Reverse current I R =  (TA) VR = 28V 300 Reverse current IR = TA = Parameter 10 -9...