BB679...
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners High capacitance ratio C1V/C28V...
BB679...
Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners High capacitance ratio C1V/C28V (typ. 18.3) Low series resistance Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB679-02V
1
2
Type BB679-02V*
Package SC79
Configuration single
LS (nH) Marking 0.6 K
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse
voltage Peak reverse
voltage ( R 5k ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 125 -55 ... 150 mA °C Unit V
1
Oct-25-2002
BB679...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 100
pF 43.5 33 2.55 2.4 47.5 36 2.75 2.6 18.3 13.1 0.6 51.5 38.8 2.95 2.8 20 14.5 2 0.8
%
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 16.5 CT2 /CT25
-
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
12 -
Capacitance matching1)
VR = 1 V, VR = 28 V, f = 1 MHz
CT/CT
rS
Series resistance
VR = 5 V, f = 470 MHz
1For
details please refer to Application Note 047.
2
Oct-25-2002
BB679...
Diode capacitance CT = (VR )
f = 1MHz
10 2
Normalized diode capacitance
C(TA) /C(25°C)= (TA ); f = 1MHz
1.04
CTA/C 25°C
pF
1.02
...