BB811

BB 811 Silicon Variable Capacitance Diode q BB 811 Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type BB 811 Marking white T Ordering Code (tape and reel) Q62702-B478 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 30 20 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 811 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio f = 1 MHz, VR = 1 V/28 V Series resistance f = 100 MHz, CT = 9 pF Case capacitance f = 1 MHz Capacitance matching f = 1 MHz, VR = 0.5 … 28 V Series inductance Symbol min. IR – – CT 7.8 0.85 CT1 CT28 rS CC ∆CT Values typ. – – 8.8 1.02 8.6 1 0.1 – 2.8 max. Unit nA 20 500 pF 9.8 1.2 9.5 – – 3 – – Ω pF % nH 7.8 – – – – C T LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 ...