BB814

BB814 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 1 Group 2 Group 1 Group 2 VR=2V,8V, f=1MHz CD=38pF, f=100MHz Symbol Min IR IR CD 43 CD 44.5 CD 19.1 CD 19.75 CD2/ CD8 2.05 rs Typ Max 20 200 45 46.5 21.95 22.70 2.25 0.5 Unit nA nA pF pF pF pF W In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%. Document Number 85555 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (3) BB814 Vishay Telefunken Dimensions in mm 14384 top view 14387 www.vishay.de FaxBack +1-408-970-5600 2 (3) Document Number 85555 Rev. 3, 01-Apr-99 BB814 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and o...