BB824
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode D High capacitance ra...
BB824
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode D High capacitance ratio
Applications
Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse
voltage Reverse
voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C
Electrical Characteristics
Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance
1)
Type
Group 2 Group 3 Group 2 Group 3
VR=2V,8V, f=1MHz VR=2V, f=100MHz
Symbol IR IR CD CD CD CD CD2/ CD8 rs
Min
Typ
42.5 43.7 17.5 18.0 2.25
Max 20 200 43.8 45 19.2 19.8 2.45 0.5
Unit nA nA pF pF pF pF
W
In the reverse
voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%.
Document Number 85556 Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600 1 (3)
BB824
Vishay Telefunken Dimensions in mm
14384
top view
14387
www.vishay.de FaxBack +1-408-970-5600 2 (3)
Document Number 85556 Rev. 3, 01-Apr-99
BB824
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distr...