BB833

Silicon Tuning Diode BB 833 Features Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 30 35 20 – 55 … + 150 Unit V mA – 55 … + 150 ˚C 450 K/W Semiconductor Group 1 04.96 BB 833 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance f = 1 MHz,VR = 1 V VR = 28 V Capacitance ratio f = 1 MHz, VR = 1 V, 28 V Capacitance matching f = 1 MHz, VR = 1 V … 28 V Series resistance CT = 9 pF, f = 470 MHz Series inductance Symbol min. IR – – CT 8.5 0.6 CT1 CT28 ∆CT Values typ. – – 9.3 0.75 12.4 – 1.8 – max. Unit nA 20 500 pF 10 0.9 – 3 – – – % Ω nH 11 – – – CT rs Ls Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 ...