BB844
Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band
77MHz to 108MHz
Designed f...
BB844
Silicon Variable Capacitance Diode
For FM radio tuner with extended frequency band
77MHz to 108MHz
Designed for application requiring back-to-back
diode configuration for optimum signal distortion and detuning
High tuning ratio at low supply
voltage (car radio) Monolitic chip (common cathode) for perfect
dual diode tracking
Good C- V linearity High figure of merit
BB844
3
D 1
D 2
1
2
Type BB844
Package SOT23
Configuration common cathode
LS (nH) Marking 1.8 SNs
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse
voltage Peak reverse
voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg
Value 18 20 50 -55 ... 150 -55 ... 150
Unit V mA °C
1
Nov-07-2002
BB844
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 8 V, f = 1 MHz CT
Unit max. nA 20 200
typ. -
IR
-
pF 42.5 25 10 43.75 27 11.5 3.8 0.28 45 29 13 1.5 %
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2 /CT8
3.2 -
Capacitance matching1)
VR = 2V to 8V , f = 1 MHz
CT/CT
rS
Series resistance
VR = 2 V, f = 100 MHz
1For
details please refer to Application Note 047.
2
Nov-07-2002
BB844
Diode capacitance CT = (VR )
f = 1MHz
Capacitance ratio CTref /CT = (VR )
f = 1MHz
5
90
pF
CTref/C T
70 60 50
4 3.5 3 2...