BC107,A,B BC108B,C BC109B,C
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICO...
BC107,A,B BC108B,C BC109B,C
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC
BC107 50
45
6.0
BC108 BC109 30 30 25 25 5.0 5.0 200 600
-65 to +200 175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V (BC107)
ICBO
VCB=45V, TA=125°C (BC107)
ICBO
VCB=25V (BC108, BC109)
ICBO
VCB=25V, TA=125°C (BC108, BC109)
BVCEO
IC=2.0mA (BC107)
45
BVCEO
IC=2.0mA (BC108, BC109)
25
BVEBO
IE=10μA (BC107)
6.0
BVEBO
IE=10μA (BC108, BC109)
5.0
VCE(SAT) IC=10mA, IB=0.5mA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=0.5mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
VBE(ON)
VCE=5.0V, IC=10mA
hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40
hFE VCE=5.0V, IC=10μA (BC108C, BC109C)
100
hFE VCE=5.0V, IC=2.0mA (BC107)
110
hFE VCE=5.0V, IC=2.0mA (BC107A)
110
hFE VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
hFE VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420
TYP MAX 15 4.0 15 4.0
0.25 0.6 0.7 0.83 1....