BC141-10

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC140; BC141 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC140 BC141 VCEO collector-emitter voltage BC140 BC141 ICM Ptot hFE peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-16; BC141-16 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz Tcase ≤ 45 °C IC = 100 mA; VCE = 1 V 63 100 50 100 160 − 160 250 − MHz open base − − − − − − − − 40 60 1.5 3.7 V V A W CONDITIONS open emitter − − − − 80 100 V V MIN. TYP. MAX. UNIT 1997 May 12 2 Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC140 BC141 VCEO collector-emitter voltage BC140 BC141 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base curr...