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BC141

STMicroelectronics

GENERAL PURPOSE TRANSISTORS

BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 met...


STMicroelectronics

BC141

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Description
BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T amb ≤ 45 C o at T case ≤ 45 C St orage Temperature Max. Operating Junction Temperature o Value 100 60 7 1 0.1 0.65 3.7 -55 to 175 175 Unit V V V A A W W o o C C 1/5 November 1997 BC141 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 35 200 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Test Cond ition s V CE = 60 V V CE = 60 V I C = 100 µA T amb = 150 oC 100 Min. Typ . Max. 100 100 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain I C = 30 mA 60 V I E = 100 µ A 7 V I C = 100 mA I C = 500 mA IC = 1 A IC = 1 A I C = 100 µA for BC141 for BC141 Gr. for BC141 Gr. for B...




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