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BC184 Datasheet

NPN Silicon Epitaxial Planar Transistor

BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage BC182 BC183, BC184 BC182 BC183, BC184 Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range S.


SEMTECH
BC184.pdf

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SEMTECH BC184 Datasheet

BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage BC182 BC183, BC184 BC182 BC183, BC184 Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Value 60 45 50 30 6 100 350 150 - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 µA at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Symbol BC182, BC183 BC184 BC182 BC183 BC184 BC182, BC183 BC184 hFE hFE hFE hFE hFE hFE hFE BC182 BC183, BC1.






MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC182/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 182 183 184 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate a.


Motorola
BC184.pdf

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Motorola BC184 Datasheet

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC182/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 182 183 184 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 50 30 30 60 45 45 6.0 100 350 2.8 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 Watts 8.0 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) BC182 BC183 BC184 V(BR)CEO Collec.






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Micro Electronics
BC184.pdf

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Micro Electronics BC184 Datasheet

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