BC327/328
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages • ...
BC327/328
BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCES Parameter Collector-Emitter
Voltage : BC327 : BC328 Collector-Emitter
Voltage : BC327 : BC328 Emitter-Base
Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C
VCEO
VEBO IC PC TJ TSTG
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown
Voltage : BC327 : BC328 Collector-Emitter Breakdown
Voltage : BC327 : BC328 Emitter-Base Breakdown
Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter On
Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V
BVCES
BVEBO ICES
hFE1 hFE2 VCE (sat) VBE (on) fT Cob
hFE Classification
Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170-
©2002 Fairchild ...