BC32740

BC327/328 BC327/328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 : BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V BVCES BVEBO ICES hFE1 hFE2 VCE (sat) VBE (on) fT Cob hFE Classification Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170- ©2002 Fairchild ...