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BC338-25 Datasheet

Part Number BC338-25
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Amplifier Transistors
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C www.DataSheet4U.com • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C T.

  BC338-25   BC338-25






Part Number BC338-25
Manufacturers JIANGSU CHANGJIANG
Logo JIANGSU CHANGJIANG
Description NPN Transistor
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test condi.

  BC338-25   BC338-25







Part Number BC338-25
Manufacturers Siemens
Logo Siemens
Description NPN Silicon AF Transistors
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 Pin Configuration 123 CBE Package1) TO-92 1) For detailed information see chapter Package Outline.

  BC338-25   BC338-25







Part Number BC338-25
Manufacturers JCET
Logo JCET
Description NPN Transistor
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test condi.

  BC338-25   BC338-25







Part Number BC338-25
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description NPN Transistor
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

Small Signal Product BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor NPN Transistor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin.

  BC338-25   BC338-25







Part Number BC338-25
Manufacturers MCC
Logo MCC
Description NPN Plastic-Encapsulate Transistors
Datasheet BC338-25 DatasheetBC338-25 Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings x Operating temperature : -55к to +150к x Storage temperature : -55к to +150к Electrical Characteristics @ .

  BC338-25   BC338-25







Amplifier Transistors

BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C www.DataSheet4U.com • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 3 EMITTER MARKING DIAGRAM BC33 xxxx YWW °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W TO−92 (TO−226) CASE 29 xxxx Y WW = Specific Device Code = Year = Work Week Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniq.


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