BC338

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25,-40 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 45 25 50 30 5.0 800 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) BC337 BC338 V(BR)CEO Collector – Emitter Breakdown Voltage (IC = 100 µA, IE = 0) BC337 BC338 V(BR)CES Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC337 BC338 BC337 BC338 V(BR)EBO ICBO ICES IEBO Min 45 25 50 30 5.0 — — — — — 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit Vdc —— —— Vdc —— —— — — Vdc nAdc — 100 — 100 nAdc — 100 —...