MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC372/D
High Voltage Darlington Transistors
NPN Silicon
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC372/D
High
Voltage Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
BC372 BC373
1 2
EMITTER 1
3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 1.0 625 5.0 1.5 12 –55 to +150 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage(1) (IC = 100 mAdc, IB = 0) Collector – Base Breakdown
Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown
Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO — — — — — — 100 100 100 nAdc 100 80 12 — — — — — — Vdc nAdc 100 80 — — — — Vdc Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data © M...