Transistors. BC547 Datasheet

BC547 Datasheet PDF

Part BC547
Description Amplifier Transistors
Feature BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECT.
Manufacture ON Semiconductor
Datasheet
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BC547
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
VCEO
Vdc
BC546
65
BC547
45
BC548
30
Collector-Base Voltage
VCBO
Vdc
BC546
80
BC547
50
BC548
30
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0 Vdc
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100 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
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COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 17
BC
54xx
YWWG
1
2
3
BC54xx = Specific Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 4
1
Publication Order Number:
BC546/D



BC547
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
Collector − Base Breakdown Voltage
(IC = 100 mAdc)
BC546
BC547
BC548
V(BR)CBO
Emitter − Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
ON CHARACTERISTICS
BC546
BC547
BC548
BC546/547/548
ICES
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
hFE
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
Collector − Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
Base − Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
Base − Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small − Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, Df = 200 Hz)
BC546
BC547
BC548
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
Cibo
hfe
NF
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2
Min
65
45
30
80
50
30
6.0
6.0
6.0
110
110
110
110
200
420
0.55
150
150
150
125
125
125
240
450
Typ
0.2
0.2
0.2
90
150
270
180
290
520
120
180
300
0.09
0.2
0.3
0.7
300
300
300
1.7
10
220
330
600
2.0
2.0
2.0
Max
15
15
15
4.0
450
800
800
220
450
800
0.25
0.6
0.6
0.7
0.77
4.5
500
900
260
500
900
10
10
10
Unit
V
V
V
nA
mA
V
V
V
MHz
pF
pF
dB




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