Amplifier Transistors
NPN Silicon
BC546B, BC547A, B, C, BC548B, C
Features
• Pb−Free Packages are Available*
DATA SHEET...
Amplifier Transistors
NPN Silicon
BC546B, BC547A, B, C, BC548B, C
Features
Pb−Free Packages are Available*
DATA SHEET www.onsemi.com
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating Collector - Emitter
Voltage
Symbol Value
Unit
VCEO
Vdc
BC546
65
BC547
45
BC548
30
Collector - Base
Voltage
VCBO
Vdc
BC546
80
BC547
50
BC548
30
Emitter - Base
Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
6.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
1 2 3
BENT LEAD TAPE & REEL
MARKING DIAGRAM
BC 54xy AYWW G
G
x = 6, 7, or 8 y = A, B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and solderi...