BC557, 557B
General Purpose Transistor
Features:
• PNP Silicon Planar Epitaxial Transistors. • Especially Suited For use...
BC557, 557B
General Purpose Transistor
Features:
PNP Silicon Planar Epitaxial Transistors. Especially Suited For use in Driver Stages of Audio
Amplifiers, Low Noise Input
Stages of Tape Recorders, HI-FI
Amplifiers, Signal Processing Circuits of Television Receivers.
TO-92 Plastic Package
Dimensions
A B C D E F G H K
Minimum
Maximum
4.32 5.33
4.45 5.20
3.18 4.19
0.41 0.55
0.35 0.50
5°
1.40 1.14
1.53
12.70
-
Dimensions : Millimetres
Pin Configuration 1. Emitter 2. Base 3. Collector
Page 1
31/05/05 V1.0
BC557, 557B
General Purpose Transistor
Absolute Maximum Ratings
Parameter
Collector-Emitter
Voltage Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage
Collector Current Continuous Peak
Base Current Peak Emitter Current Peak Power Dissipation at Ta = 25°C Derate above 25°C Storage Temperature
Symbol
VCEO VCES VCBO VEBO
IC ICM IBM IEM
PTA
Tstg
Rating 45
50
5.0 100 200
200
500 4.0 -65 to +150
Junction Temperature Thermal Resistance Junction to Ambient
Tj Rth(j-a)
150 250
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
Parameter Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage
Symbol
VCEO VCBO VEBO
Test Condition
IC = 2mA, IB = 0 IC = 100µA. IE = 0 IE = 100µA, IC = 0
Collector-Cut off Current
ICBO ICES
VCB = 30V, IE = 0
Tj = 150°C VCB = 30V, IE = 0 VCE = 80V, VBE = 0
Unit V
mA
mW mW/°C
°C
°C/W
Rating >45 >50 >5.0
<15
<5.0 <15
Unit V
nA µA nA
Collector-Cut off Current DC Current Gain
I...