BC557

BC557, 557B General Purpose Transistor Features: PNP Silicon Planar Epitaxial Transistors. Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers. TO-92 Plastic Package Dimensions A B C D E F G H K Minimum Maximum 4.32 5.33 4.45 5.20 3.18 4.19 0.41 0.55 0.35 0.50 5° 1.40 1.14 1.53 12.70 - Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 BC557, 557B General Purpose Transistor Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Peak Emitter Current Peak Power Dissipation at Ta = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCES VCBO VEBO IC ICM IBM IEM PTA Tstg Rating 45 50 5.0 100 200 200 500 4.0 -65 to +150 Junction Temperature Thermal Resistance Junction to Ambient Tj Rth(j-a) 150 250 Electrical Characteristics (Ta = 25°C Unless Otherwise Specified) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Test Condition IC = 2mA, IB = 0 IC = 100µA. IE = 0 IE = 100µA, IC = 0 Collector-Cut off Current ICBO ICES VCB = 30V, IE = 0 Tj = 150°C VCB = 30V, IE = 0 VCE = 80V, VBE = 0 Unit V mA mW mW/°C °C °C/W Rating >45 >50 >5.0 <15 <5.0 <15 Unit V nA µA nA Collector-Cut off Current DC Current Gain I...