BC557C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC556, A, B, BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage VCES Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Peak IBM Emitter Current Peak IEM Power Dissipation at Ta=25ºC PD Derate Above 25ºC Storage Temperature Tstg Junction Temperature Tj BC556 65 80 80 BC557 45 50 50 5 100 200 200 200 500 4.0 - 65 to +150 150 BC558 30 30 30 THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 250 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=100µA, IC=0 Collector Cut Off Current ICBO VCB=30V, IE=0 ALL VCB=30V, IE=0, Tj=150ºC ALL Collector Cut Off Current ICES VCE=80V, VBE=0 VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=80V, VEB=0, Tj=125ºC VCE=50V, VEB=0, Tj=125ºC VCE=30V, VEB=0, Tj=125ºC BC556 >65 >80 <15 <4.0 BC557 >45 >50 >5.0 <15 <5.0 <15 <4.0 BC558 >30 >30 <15 <4.0 UNITS V V V V mA mA mA mA mW mW/ºC ºC ºC ºC/W UNITS V V V nA µA nA nA nA µA µA µA BC556_5...