Current Transistors. BC639-16 Datasheet

BC639-16 Datasheet PDF


Part Number

BC639-16

Description

High Current Transistors

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download BC639-16 Datasheet



BC639-16
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Symbol
BC637
BC639
VCEO
Value
60
80
Unit
Vdc
Collector - Base Voltage
BC637
BC639
VCBO
60
80
Vdc
Emitter - Base Voltage
Collector Current Continuous
Total Device Dissipation
Derate above 25°C
@
TA
=
25°C
VEBO
IC
PD
5.0 Vdc
1.0 Adc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 800 mW
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
TO92
CASE 29
STYLE 14
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
BC
63x
AYWW G
G
BC63
916
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
February, 2011 Rev. 1
1
x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC637/D

BC639-16
BC637, BC639, BC63916
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
BC637
BC639
V(BR)CEO
60
80
Vdc
Collector Emitter ZeroGate Breakdown Voltage(Note 1)
(IC = 100 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC63916
BC637
BC639
V(BR)CES
V(BR)CBO
120
60
80
Vdc
Vdc
Emitter Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (Note 1)
V(BR)EBO
5.0
Vdc
ICBO
− − 100 nAdc
− − 10 mAdc
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
BC637
BC639
BC63916ZLT1
hFE
25
40 160
40 160
100 250
25
VCE(sat)
Vdc
0.5
VBE(on)
Vdc
1.0
Current Gain Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
fT
MHz
200
Cob
pF
7.0
Cib pF
50
ORDERING INFORMATION
Device
BC637G
Package
TO92
(PbFree)
Shipping
5000 Units / Bulk
BC637RL1G
TO92
(PbFree)
2000 / Tape & Reel
BC639G
TO92
(PbFree)
5000 Units / Bulk
BC639RL1G
TO92
(PbFree)
2000 / Tape & Reel
BC639ZL1G
TO92
(PbFree)
2000 / Ammo Box
BC63916ZL1G
TO92
(PbFree)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2




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