BC63916

BC63916 BC63916 Switching and Amplifier Applications www.DataSheet4U.com 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO VEBO IC PC TJ, TSTG Parameter Collector-Emitter Voltage at RBE=1KΩ Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating and Storage Junction Temperature Range Value 100 100 80 5 1 1 -55 ~ 150 Units V V V V A W °C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 100µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCB = 30V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 5mA VCE = 2V, IC = 150mA VCE = 2V, IC = 500mA IC = 500mA, IB = 50mA VCE = 2V, IC = 500mA VCE = 5V, IC=10mA, f = 50MHz 100 25 100 25 Min. 100 80 5.0 100 10 250 0.5 1 V V MHz Typ. Max. Units V V V nA µA Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product ©2003 Fairchild Semiconductor Corporation Rev. A, January 2003 BC63916 Package Dimensions TO-92 * * ; www.DataSheet4U.com Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L...