MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC807–16LT1/D
General Purpose Transistors
PNP Silicon
2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc COLLECTOR 3
BC807-16LT1 BC807-25LT1 BC807-40LT1
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–.
Transistor
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC807–16LT1/D
General Purpose Transistors
PNP Silicon
2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc COLLECTOR 3
BC807-16LT1 BC807-25LT1 BC807-40LT1
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, TJ = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — –100 –5.0 nA µA –45 –50 –5.0 — — — — — — V V V
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–.