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BC817-25LT1 Datasheet

Part Number BC817-25LT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description General Purpose Transistors
Datasheet BC817-25LT1 DatasheetBC817-25LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC817–16LT1/D General Purpose Transistors NPN Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 B.

  BC817-25LT1   BC817-25LT1






Part Number BC817-25LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description General Purpose Transistors
Datasheet BC817-25LT1 DatasheetBC817-25LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC817–16LT1/D General Purpose Transistors NPN Silicon 1 BASE 2 EMITTER COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Bo.

  BC817-25LT1   BC817-25LT1







General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC817–16LT1/D General Purpose Transistors NPN Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit DEVICE MARKING BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — 100 5.0 nA µA 45 50 5.0 — — — — — — V V V Thermal Clad is a registered trademark of the Bergquist Company. Motorola Small–S.


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