BC817DPN

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 2002 Nov 22 NXP Semiconductors NPN/PNP general purpose transistor Product data sheet BC817DPN FEATURES High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS General purpose switching and amplification Complementary driver Half and full bridge driver. DESCRIPTION NPN/PNP transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER BC817DPN MARKING CODE N4 QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM collector-emitter voltage collector current (DC) peak collector current MAX. UNIT 45 V 500 mA 1A PINNING PIN 1, 4 emitter 2, 5 base 6, 3 collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 handbook, halfpag6e 5 4 65 4 TR2 TR1 12 Top view 3 MAM445 123 Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector Tamb ≤ 25 °C; note ...