MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846AWT1/D
General Purpose Transistors
NPN Silicon
Thes...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
1 BASE
COLLECTOR 3
BC846AWT1,BWT1 BC847AWT1,BWT1,
CWT1 BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol BC846 BC847 BC848 Unit
Collector – Emitter
Voltage
VCEO
65
45
30
V
Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature DEVICE MARKING
RqJA PD TJ, Tstg
833 2.4 – 55 to +150
°C/W mW/°C
°C
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847B...
