BC847BDW1

Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector −Emitter Voltage VCEO 65 45 30 V Collector −Base Voltage VCBO 80 50 30 V Emitter −Base Voltage VEBO 6.0 6.0 5.0 V Collector Current − Continuous IC 100 100 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation PD Per Device FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 −55 to +150 Unit mW mW mW/°C °C/W °C www.onsemi.com SOT−363/SC−88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAM 6 1x MG G 1 1x = Specific Device Code x = B, F, G, L M = Date Code G = Pb−Free Package (Note: Microdot may be in ...