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BC847BV

nexperia

NPN general purpose double transistor

BC847BV NPN general purpose double transistor 27 December 2022 Product data sheet 1. General description NPN double tr...


nexperia

BC847BV

File Download Download BC847BV Datasheet


Description
BC847BV NPN general purpose double transistor 27 December 2022 Product data sheet 1. General description NPN double transistor in an ultra small SOT666 flat lead plastic package. PNP complement: BC857BV 2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package Excellent coplanarity due to straight leads Low collector capacitance Improved thermal behaviour due to flat leads Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors Reduces required board space Reduces pick and place costs 3. Applications General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current hFE DC current gain Conditions open base VCE = 5 V; IC = 2 mA; Tamb = 25 °C Min Typ Max Unit - - - - 200 - 45 V 100 mA 450 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 Simplified outline 654 123 SOT666 Graphic symbol C1 B2 E2 TR2 TR1 E1 B1 C2 sym020 Nexperia BC847BV NPN general purpose double transistor 6. Ordering information Table 3. Ordering information Type number Package Name BC847BV SOT666 Description plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Version SOT666 7....




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