Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
6 54
BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1
Q2
12
Q1
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous
V CEO V CBO V EBO
IC
BC846 65 80 6.0 100
BC847 BC848 45 3.
Dual General Purpose Transistors
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
6 54
BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1
Q2
12
Q1
3
See Table
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous
V CEO V CBO V EBO
IC
BC846 65 80 6.0 100
BC847 BC848 45 30 50 30 6.0 5.0 100 100
Unit V V V
mAdc
6 5
4
1 2
3
SOT-363 /SC-88 CASE 419B STYLE1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1
Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363
Symbol PD
R θJA T .