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BC850BLT1 Datasheet

Part Number BC850BLT1
Manufacturers Motorola
Logo Motorola
Description General Purpose Transistors
Datasheet BC850BLT1 DatasheetBC850BLT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D www.DataSheet4U.com General Purpose Transistors BC846ALT1,BLT1 BC847ALT1, NPN Silicon 1 BASE COLLECTOR 3 BLT1,CLT1 thru BC850ALT1,BLT1, CLT1 BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 1.

  BC850BLT1   BC850BLT1






Part Number BC850BLT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Silicon Transistor
Datasheet BC850BLT1 DatasheetBC850BLT1G Datasheet (PDF)

DATA SHEET www.onsemi.com General Purpose Transistors NPN Silicon BC846ALT1G Series Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V.

  BC850BLT1   BC850BLT1







General Purpose Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D www.DataSheet4U.com General Purpose Transistors BC846ALT1,BLT1 BC847ALT1, NPN Silicon 1 BASE COLLECTOR 3 BLT1,CLT1 thru BC850ALT1,BLT1, CLT1 BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 2 EMITTER Unit V V V mAdc 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 Rq JA PD 300 2.4 Rq JA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Base Bre.


2009-02-25 : CM1011    OTC-236    OTC-238    OTC-239    SSC-MBT722    FDP20N50F    FDPF20N50FT    FDP24AN06LA0    FDB24AN06LA0    FDP24N40   


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