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BC856BDW1T1 Datasheet

Part Number BC856BDW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC856BDW1T1 DatasheetBC856BDW1T1 Datasheet (PDF)

BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Curre.

  BC856BDW1T1   BC856BDW1T1






Part Number BC856BDW1T1
Manufacturers WILLAS
Logo WILLAS
Description Dual General Purpose Transistors
Datasheet BC856BDW1T1 DatasheetBC856BDW1T1 Datasheet (PDF)

WILLAS BC85xxDFWMT11HT2R10U-M+ Dual General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. • Low power loss, high efficiency. ad••••peUGHHTspiliiluhgtggiracenhhaarsedscethdiruuioigrrfntngrho.

  BC856BDW1T1   BC856BDW1T1







Dual General Purpose Transistors

BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC856 −65 −80 −5.0 −100 BC857 −45 −50 −5.0 −100 BC858 −30 −30 −5.0 −100 Unit V V V mAdc 1 2 3 http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING 6 5 4 3xm See Table SOT−363/SC−88 CASE 419B Style 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 −55 to +150 Unit mW 3x = Specific Device Code x = B, F, G, K, L M = Date Code ORDERING INFORMATION mW/°C °C/W °C Device BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 Package SOT−363 SOT−363 SOT−363 SOT−363 SOT−363 Shipping† 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging S.


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