BC856BWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc COLLECTOR 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous 3 1 2 CASE 419–02, STYLE 3 SOT–323/SC–70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Se...