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BC857 Transistor Datasheet PDFPNP Transistor PNP Transistor |
| Part Number | BC857 |
|---|---|
| Description | PNP Transistor |
| Feature | DISCRETE SEMICONDUCTORS
DATA SHEET
BC85 6; BC857; BC858 PNP general purpose tra nsistors
Product data sheet Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
PNP general purpose tran sistors
Product data sheet
BC856; BC85 7; BC858
FEATURES • Low current (max . 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switch ing and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC84 6, BC847 and BC848. MARKING TYPE NUMB ER BC856 BC856A BC856B BC857 BC857A BC8 57B BC857C BC858B M . |
| Manufacture | NXP |
| Datasheet |
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| Part Number | BC857 |
|---|---|
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Feature | Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITA XIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC8 58B = 3K BC858C = 3L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 PACKAGE OUTLINE DETAILS ALL DIMENSIO NS IN mm ABSOLUTE MAXIMUM RATINGS Coll ector–emitter voltage (+VBE = 1 V) Co llector–emitter voltage (open base) C ollector current (peak value) Total pow er dissipation up to T . |
| Manufacture | CDIL |
| Datasheet |
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| Part Number | BC857 |
|---|---|
| Description | PNP Transistor |
| Feature | PNP Transistor
General Purpose
SOT-23
F eatures:
• Low current (maximum100 mA ) • Low voltage (maximum 65 V) Applic ations: • General purpose switching a nd amplification Maximum Ratings and C haracteristics : Tamb = 25°C unless ot herwise specified Parameter Symbol V alue Collector - Base Voltage - BC856 - BC857 - BC858 VCBO -80 -50 -30 Co llector - Emitter Voltage - BC856 - BC 857 - BC858 Emitter - Base Voltage Col lector Current - Continuous Collector D issipation Junction and Storage Tempera ture VCEO Vebo IC PC Tj, Tstg -65 -45 -30 -5 -0. 1 250 -65 to +150 Unit V A mW °C Parameter Coll . |
| Manufacture | Multicomp |
| Datasheet |
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