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BC857CDW1T1 Datasheet

Part Number BC857CDW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual General Purpose Transistors
Datasheet BC857CDW1T1 DatasheetBC857CDW1T1 Datasheet (PDF)

BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuou.

  BC857CDW1T1   BC857CDW1T1






Part Number BC857CDW1T1
Manufacturers WILLAS
Logo WILLAS
Description Dual General Purpose Transistors
Datasheet BC857CDW1T1 DatasheetBC857CDW1T1 Datasheet (PDF)

WILLAS BC85xxDFWMT11HT2R10U-M+ Dual General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. • Low power loss, high efficiency. ad••••peUGHHTspiliiluhgtggiracenhhaarsedscethdiruuioigrrfntngrho.

  BC857CDW1T1   BC857CDW1T1







Dual General Purpose Transistors

BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation PD Per Device FR– 5 Board (1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 – 55 to +150 Unit mW mW/°C °C/W °C http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) 6 54 1 23 SOT–363/SC–88 CASE 419B STYLE 1 DEVICE MARKING See Table ORDERING INFORMATION Device Package Shipping BC857BDW1T1 SOT–363 3000 Units/Reel BC857CDW1T1 SOT–363 3000 Units/Reel BC858BDW1T1 SOT–363 3000 Units/Reel BC858CDW1T1 SOT–363 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 February, 2000 – Rev. 0 Publication Order Number: BC857BDW1T1/D BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 ELEC.


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