www.DataSheet4U.com
BC857BTT1, BC857CTT1
Preferred Devices
General Purpose Transistor
PNP Silicon
These transistors ar...
www.DataSheet4U.com
BC857BTT1, BC857CTT1
Preferred Devices
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR 3 1 BASE
Pb−Free Package is Available*
MAXIMUM RATINGS (TA = 25°C)
Rating Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Max −45 −50 −5.0 −100 Unit V V V mAdc 3 2 1
2 EMITTER
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
CASE 463 SOT−416 STYLE 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. Symbol PD 200 1.6 RqJA PD 300 2.4 RqJA TJ, Tstg 400 −55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit
MARKING DIAGRAM
xxM
xx = Device Code M = Date Code
ORDERING INFORMATION
See detaile...