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BC857CTT1

ON Semiconductor

General Purpose Transistors

www.DataSheet4U.com BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors ar...


ON Semiconductor

BC857CTT1

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www.DataSheet4U.com BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 1 BASE Pb−Free Package is Available* MAXIMUM RATINGS (TA = 25°C) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Max −45 −50 −5.0 −100 Unit V V V mAdc 3 2 1 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. CASE 463 SOT−416 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. Symbol PD 200 1.6 RqJA PD 300 2.4 RqJA TJ, Tstg 400 −55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit MARKING DIAGRAM xxM xx = Device Code M = Date Code ORDERING INFORMATION See detaile...




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