BC858ALT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1, CLT1 MAXIMUM RATINGS 2 EMITTER Rating Symbol BC856 BC857 BC858 Unit Collector – Emitter Voltage Collector – Base Voltage VCEO –65 –45 –30 VCBO –80 –50 –30 V V Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VEBO IC –5.0 –100 –5.0 –100 –5.0 –100 V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RqJA TJ, Tstg 417 – 55 to +150 °C/W °C BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1...