BC858AWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE COLLECTOR 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices MAXIMUM RATINGS 2 EMITTER Rating Symbol BC856 BC857 BC858 Unit Collector – Emitter Voltage VCEO –65 –45 –30 V Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCBO VEBO IC –80 –5.0 –100 –50 –5.0 –100 –30 –5.0 –100 V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) PD 150 mW TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RqJA TJ, Tstg 833 – 55 to +150 °C/W °C BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3...