MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC856AWT1/D
General Purpose Transistors
PNP Silicon
Thes...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC856AWT1/D
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
1 BASE
COLLECTOR 3
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,
CWT1
Motorola Preferred Devices
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter
Voltage
VCEO –65 –45 –30
V
Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous
VCBO VEBO
IC
–80 –5.0 –100
–50 –5.0 –100
–30 –5.0 –100
V V mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING
RqJA TJ, Tstg
833 – 55 to +150
°C/W °C
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3...