BCF040T

BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF040T is produced using state of the art metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for increased reliability. Product Features 23.0 dBm Typical Output Power 13 dB Typical Power Gain @ 12 GHz Low Phase Noise 0.3 X 400 Micron Recessed Gate Applications Commercial Military / Hi-Rel Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS MINIMUM Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-...