BCF060T

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for increased reliability. Product Features 25.0 dBm Typical Output Power 12.5 dB Typical Power Gain @ 12 GHz Low Phase Noise 0.3 X 600 Micron Recessed Gate Applications Commercial Military / Hi-Rel Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltag...